Static-random-access-memory cell

ABSTRACT

A 4-T SRAM cell includes access transistors of a first type and cell (pull-up or pull-down) transistors of a second type. For example, the cell includes PMOS access transistors and NMOS pull-down transistors. The cell may also include leaky-junction or Schottky loads.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of pending U.S. patent application Ser.No. 09/074,952, filed May 8, 1998.

TECHNICAL FIELD

The invention relates generally to integrated circuits and morespecifically to a static-random-access-memory (SRAM) cell that issuitable for use with low supply voltages, that has a reduced size ascompared with conventional SRAM cells, or both.

BACKGROUND OF THE INVENTION

To meet customer demand for smaller and more power efficient integratedcircuits (ICs), manufacturers are designing newer ICs that operate withlower supply voltages and that include smaller internal subcircuits suchas memory cells. Many ICs, such as memory circuits or other circuitssuch as microprocessors that include onboard memory, include one or moreSRAM cells for data storage. SRAM cells are popular because they operateat a higher speed than dynamic-random-access-memory (DRAM) cells, and aslong as they are powered, they can store data indefinitely, unlike DRAMcells, which must be periodically refreshed.

FIG. 1 is a circuit diagram of a conventional 6-transistor (6-T) SRAMcell 10, which can operate at a relatively low supply voltage, forexample 2.2 V-3.3 V, but which is relatively large. A pair of NMOSaccess transistors 12 and 14 allow complementary bit values D and D ondigit lines 16 and 18, respectively, to be read from and to be writtento a storage circuit 20 of the cell 10. The storage circuit 20 includesNMOS pull-down transistors 22 and 26, which are coupled in apositive-feedback configuration with PMOS pull-up transistors 24 and 28.Nodes A and B are the complementary inputs/outputs of the storagecircuit 20, and the respective complementary logic values at these nodesrepresent the state of the cell 10. For example, when the node A is atlogic 1 and the node B is at logic 0, then the cell 10 is storing alogic 1. Conversely, when the node A is at logic 0 and the node B is atlogic 1, then the cell 10 is storing a logic 0. Thus, the cell 10 isbistable, i.e., can have one of two stable states, logic 1 or logic 0.

In operation during a read of the cell 10, a word-line WL, which iscoupled to the gates of the transistors 12 and 14, is driven to avoltage approximately equal to Vcc to activate the transistors 12 and14. For example purposes, assume that Vcc=logic 1=5 V and Vss=logic 0=0V, and that at the beginning of the read, the cell 10 is storing a logic0 such that the voltage level at the node A is 0 V and the voltage levelat the node B is 5 V. Also, assume that before the read cycle, the digitlines 16 and 18 are equilibrated to approximately Vcc. Therefore, theNMOS transistor 12 couples the node A to the digit line 16, and the NMOStransistor 14 couples the node B to the digit line 18. For example,assuming that the threshold voltages of the transistors 12 and 14 areboth 1 V, then the transistor 14 couples a maximum of 4 V from the digitline 18 to the node B. The transistor 12, however, couples the digitline 16 to the node A, which pulls down the voltage on the digit line 16enough (for example, 100-500 millivolts) to cause a sense amp (notshown) coupled to the lines 16 and 18 to read the cell 10 as storing alogic 0.

In operation during a write, for example, of a logic 1 to the cell 10,and making the same assumptions as discussed above for the read, thetransistors 12 and 14 are activated as discussed above, and logic 1 isdriven onto the digit line 16 and a logic 0 is driven onto the digitline 18. Thus, the transistor 12 couples 4 V (the 5 V on the digit line16 minus the 1 V threshold of the transistor 12) to the node A, and thetransistor 14 couples 0 V from the digit line 18 to the node B. The lowvoltage on the node B turns off the NMOS transistor 26, and turns on thePMOS transistor 28. Thus, the inactive NMOS transistor 26 allows thePMOS transistor 28 to pull the node A up to 5 V. This high voltage onthe node A turns on the NMOS transistor 22 and turns off the PMOStransistor 24, thus allowing the NMOS transistor 22 to reinforce thelogic 0 on the node B. Likewise, if the voltage written to the node B is4 V and that written to the node A is 0 V, the positive-feedbackconfiguration ensures that the cell 10 will store a logic 0.

Because the PMOS transistors 26 and 28 have low on resistances(typically on the order of a few kilohms), they can pull the respectivenodes A and B virtually all the way up to Vcc often in less than 10nanoseconds (ns), and thus render the cell 10 relatively stable andallow the cell 10 to operate at a low supply voltage as discussed above.But unfortunately, the transistors 26 and 28 cause the cell 10 to beapproximately 30%-40% larger than a 4-transistor (4-T) SRAM cell, whichis discussed next.

FIG. 2 is a circuit diagram of a conventional 4-T SRAM cell 30, whereelements common to FIGS. 1 and 2 are referenced with like numerals. Amajor difference between the 6-T cell 10 and the 4-T cell 30 is that thePMOS pull-up transistors 26 and 28 of the 6-T cell 10 are replaced withconventional passive loads 32 and 34. For example, the loads 32 and 34are often polysilicon resistors. Otherwise the topologies of the 6-Tcell 10 and the 4-T cell 30 are the same. Furthermore, the 4-T cell 30operates similarly to the 6-T cell 10. Because the loads 32 and 34 areusually built in another level above the access transistors 12 and 14and the NMOS pull-down transistors 22 and 26, the 4-T cell 30 usuallyoccupies much less area than the 6-T cell 10. But as discussed below,the high resistance values of the loads 32 and 34 can substantiallylower the stability margin of the cell 30 as compared with the cell 10.Thus, under certain conditions, the cell 30 can inadvertently becomemonostable or read unstable instead of bistable. Also, the cell 30consumes more power than the cell 20 because there is always currentflowing from Vcc to Vss through either the load 32 and the NMOStransistor 24 or the load 34 and the NMOS transistor 22. In contrast,current flow from Vcc to Vss in the cell 20 is always blocked by one ofthe NMOS/PMOS transistor pairs 22/24 and 26/28.

Still referring to FIG. 2, the cell 30 is monostable when it can storeonly one logic state instead of two when the access transistors 12 and14 are in the off state. More specifically, in order to minimize thequiescent current, and thus the quiescent power, drawn by the cell 30,the loads 32 and 34 have relatively high resistance values, often on theorder of megaohms or gigaohms. But offset currents, typically on theorder of picoamps (pA), often flow from the nodes A and B. These offsetcurrents are typically due to the leakage currents, the subthresholdcurrents, or both generated by the transistors 12, 14, 22, and 24 whenthey are in an off state. To prevent these offset currents from causingthe cell 30 to spontaneously change states, the loads 32 and 34 musthave values low enough so that when the transistors 12 and 26 and 14 and22 are off, the currents that flow from Vcc to the nodes A and B aregreater than or equal to these respective offset currents. For example,suppose that initially the cell 30 is storing a logic 1 such that thevoltage at the node A is approximately 5 V and the voltage at the node Bis approximately 0 V. Furthermore, suppose that the total offset currentdrawn from the node A is 10 pA. If the load 32 allows only 5 pA to flowfrom Vcc to the node A, then the larger offset current will graduallydischarge the parasitic capacitance (not shown in FIG. 2) associatedwith the node A, thus lowering the voltage at the node A until thetransistor 22 turns off. At this point, assuming that the currentthrough the load 34 is greater than the offset current drawn from thenode B, then the voltage at the node B gradually increases until thetransistor 26 turns on and thus pulls the node A to 0 V. Thus, in thisexample, the cell 30 has only one stable state, logic 0, when the accesstransistors 12 and 14 are off, and is therefore monostable. That is,even if a logic 1 is written to it, the cell 30 will eventually andspontaneously flip to a logic 0.

Still referring to FIG. 2, even when the cell 30 is bistable, it maystill be read unstable. Read instability occurs when the cell 30 hasonly one stable logic state when the access transistors 12 and 14 areon, as they are during a read. Therefore, the cell 30 may be able tostably store a logic 1 or logic 0 that is written to it, but when theaccess transistors 12 and 14 are activated during a read (when there areno write voltages driven onto the digit lines 16 and 18), the cell 30becomes read-monostable. If the logic state last written to the cell 30is opposite the read-monostable state, then the cell 30 willspontaneously flip states.

FIG. 3A is a graph showing the behavior of a first branch of the cell 30that includes the access transistor 12 and the pull-down transistor 26.V_(A) is the voltage at the node A of FIG. 2, and V_(B) is the voltageat the node B, which is also the input voltage to the gate of thetransistor 26. Region C is where the transistor 12 is on and thetransistor 26 is off, region B is where both the transistors 12 and 26are on and in saturation, and region E is where both the transistors 12and 26 are on but the transistor 26 is in the linear region, thusforcing node A to a low value. Processing variations in the transistors12 and 26, or changes in Vcc, the back-bias voltage applied to thesubstrate (not shown in FIG. 2) of the circuit, or in the voltage at thenode A immediately after the transistor 12 is turned on may change theshape of the curve. Furthermore, a similar analysis of a second branchof the cell 30 that includes the access transistor 14 and the pull-downtransistor 22 yields a similar curve.

FIG. 3B shows the curve for the first branch of the cell 30 overlaidwith the curve for the second branch of the cell 30 when the cell 30 isread stable. Point F is the stable logic 1 state of the cell 30 wherethe voltage at the node A (V_(A1)) is logic 1, and the voltage at thenode B (V_(B1)) is logic 0. Point G represents the metastable midpointwhere both nodes A and B are equal. Point H is the stable logic 0 stateof the cell 30 where the voltage at the node A (V_(A0)) is logic 0 andthe voltage at the node B (VBO) is logic 1. The distances I and J arethe maximum widths of the respective lobes formed by the overlaidcurves. The smaller of the distances I and J is sometimes referred to asthe static noise margin (SNM), which is a measure of the stability ofthe cell 30.

FIG. 3C is an overlay of the curves of FIG. 3B when the cell 30 is readunstable and has only one stable point F when the transistors 12 and 14are on. A reduction in Vcc will reduce the heights of the curves ofFIGS. 3A and 3B, and thus increase the chances of read instability.Furthermore, because the transistors 12 and 14 are NMOS transistors, themaximum logic 1 voltage that can be coupled to the nodes A and B (fromthe equilibrated digit lines 16 and 18, respectively) during a read isVcc minus the threshold of the respective transistor 12 and 14. Thisalso reduces the heights of the curves of FIGS. 3A and 3B, and thus alsoincreases the chances of read instability. Furthermore, as discussed inmore detail below, a low logic 1 voltage at the node A or B immediatelyfollowing the activation of the access transistors 12 or 14,respectively, may cause such a reduction in the height of the curves.For example, again referring to FIG. 2, assume that the offset currentdrawn from the node A is 10 pA, but that the load 32 allows a currentgreater than 10 pA, e.g., 12-15 pA, to flow from Vcc to the node A suchthat the cell 30 is bistable when the transistors 12 and 14 are off.Furthermore, assume that a logic 1 is written to the cell 30, and thatas above, Vcc=logic 1=5 V, Vss=logic 0=0 V, and the thresholds of thetransistors 12 and 14=1 V. During such a write, approximately 4 V (5 Von the digit line 16 minus the 1 V threshold of the transistor 12) iscoupled to the node A and approximately 0 V is coupled to the node Bfrom the digit line 18 via the transistor 14. Next, assume that beforethe positive feedback action of the circuit 21 has a chance to fullycharge the node A to 5 V (this could take on the order of onenanosecond), the cell 30 is read. (A read may occur tens to hundreds ofnanoseconds after a write.) Thus, the effective lowering of the voltageon the node A from 5 volts to 4 volts after the transistors 12 and 14are activated may be sufficient to cause the cell 30 to have thecharacteristics shown in FIG. 3C, thus causing the cell 30 to be readunstable.

Therefore, as stated above, as Vcc is reduced, the probability increasesthat the cell 30 may be either monostable or read unstable. Thus,although the 4-T cell 30 is physically smaller than the 6-T cell 10 ofFIG. 1, it is much less suitable for operation at low supply voltages.

SUMMARY OF THE INVENTION

In one embodiment of the invention, a bistable memory cell includesfirst and second access terminals that respectively receive first andsecond complementary data signals having respective first and secondvoltage levels. The memory cell also includes first and second datanodes, and first and second supply terminals that respectively receive afirst supply voltage approximately equal to the first voltage level anda second supply voltage approximately equal to the second voltage level.Additionally, the memory cell includes first and second accesstransistors of a first type, first and second cell transistors of asecond type, and first and second loads. The first access transistor iscoupled to the first access terminal and to the first data node andcouples substantially all of the first voltage level to the first datanode when the first access terminal receives the first data signal. Thesecond access transistor is coupled to the second access terminal and tothe second data node and couples substantially all of the first voltagelevel to the second data node when the second access terminal receivesthe first data signal. The first cell transistor is coupled to thesecond supply terminal and to the first data node and pulls the firstdata node to approximately the second supply voltage when the seconddata node is at approximately the first voltage level. The second celltransistor is coupled to the second supply terminal and to the seconddata node and pulls the second data node to approximately the secondsupply voltage when the first data node is at approximately the firstvoltage level. The first load is coupled to the first supply terminaland to the first data node and pulls the first data node toapproximately the first supply voltage when the second data node is atapproximately the second voltage level. And the second load is coupledto the first supply terminal and to the second data node and pulls thesecond data node to approximately the first supply voltage when thefirst data node is at approximately the second voltage level.

Such a memory cell is approximately as small as a conventional 4-T cell,but can operate at a significantly lower supply voltage than aconventional 4-T cell. In other words, the memory cell includes thesmall-size advantage of a conventional 4-T cell and thelow-supply-operation advantage of a conventional 6-T cell. Furthermore,in another embodiment of the invention, the first and second loads aresignificantly smaller than conventional loads or are altogethereliminated such that the memory cell requires fewer processing steps andlayers, and thus is significantly less complex than a conventional 4-Tcell.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram of a conventional 6-T SRAM cell.

FIG. 2 is a circuit diagram of a conventional 4-T SRAM cell.

FIGS. 3A-3C are graphs showing the read characteristics of the 4T-SRAMcell of FIG. 2

FIG. 4. is a circuit diagram of a 4-T SRAM cell according to anembodiment of the invention

FIG. 5. is a circuit diagram of a 4-T SRAM cell according to anotherembodiment of the invention.

FIG. 6 is a cross-sectional view of an access transistor and a loadaccording to an embodiment of the invention that can be used with thememory cells of FIGS. 2 and 4.

FIG. 7 is a cross-sectional view of an access transistor and a loadaccording to another embodiment of the invention that can be used withthe memory cells of FIGS. 2 and 4.

FIG. 8 is a circuit diagram of a 4-T SRAIM cell according to yet anotherembodiment of the invention.

FIG. 9 is a block diagram of a memory circuit that can include thememory cells of FIG. 4, FIG. 5, or FIG. 8, or the loads of FIG. 6 orFIG. 7.

FIG. 10 a block diagram of a computer system that includes the memorycircuit of FIG. 9.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 4 is a circuit diagram of a 4-T SRAM cell 36 according to anembodiment of the invention. In FIG. 3, like reference numerals are usedto indicate elements that are common to FIGS. 1, 2 and 3.

A major difference between the cell 36 and the cell 30 of FIG. 2 is thatthe NMOS access transistors 12 and 14 of the cell 30 are replaced withPMOS access transistors 38 and 40. Otherwise, the cells 30 and 36 havethe same topology. But unlike the NMOS access transistors 12 and 14, thePMOS access transistors 38 and 40 substantially fully couple the logic 1voltage Vcc to the respective node A or B during a write cycle andduring a read cycle. (Before a read cycle, both digit lines 16 and 18are equilibrated to approximately Vcc.) Thus, the PMOS accesstransistors 38 and 40 make the cell 36 much less susceptible to readinstability, thus allowing the cell 36 to be operated with a low supplyvoltage, for example, Vcc ≦3.3 V.

For example, still referring to FIG. 4, assume that Vcc=logic 1=5 V,Vss=logic 0=0 V, WL=logic 0 to access the cell 36, the respectivethresholds of the transistors 38 and 40 are 1 V, and the cell 36 storesa logic 1 when the node A is at logic 1 and the node B is at logic 0.When the cell 36 is read, the respective transistor 38 or 40 couplessubstantially the full 5 V from the respective equilibrated digit line16 or 18 to the logic 1 node A or B. Thus, because during a read cyclethe voltage at the logic 1 node A or B is maintained at approximately 5V (and not 4 V as discussed in conjunction with FIG. 3C for theconventional cell 30 of FIG. 2), there is less likelihood that the cell36 will be read unstable. That is, the use of the PMOS accesstransistors 38 and 40 with the NMOS pull-down transistors 22 and 24increases the read margin of the cell 36, and thus significantly reducesthe likelihood of read instability. Likewise, a similar analysis can bemade when the cell 36 is read shortly after being written with a logic0.

FIG. 5 is a circuit diagram of a cell 42 according to a secondembodiment of the invention, where like reference numerals are used toindicate elements that are common to FIGS. 1, 2, 3, and 4. The cell 42is complementary to the cell 36 of FIG. 3. That is, the NMOS accesstransistors 12 and 14 replace the PMOS access transistors 38 and 40, thePMOS pull-up transistors 24 and 28 replace the loads 32 and 34, and theloads 32 and 34 replace the NMOS pull-down transistors 22 and 26. Thecell 42, like the cell 36, is also much less susceptible to readinstability than the conventional 4-T cell 30 of FIG. 2, and thus can beoperated with a low supply voltage.

For example, still referring to FIG. 5 and making the same assumptionsas in the example discussed above in conjunction with FIG. 3, when alogic 0 is written to the cell 42, the transistor 12 fully couples 0 Vfrom the digit line 16 to the node A, and the transistor 14 couples 4 Vfrom the digit line 18 to the node B. Thus, during a quickly followingread of the cell 42, the initial voltage at the node A is 0 V, making itless likely that the cell 42 will be made read unstable. That is, theuse of the NMOS access transistors 12 and 14 with the PMOS pull-uptransistors 24 and 28 increases the read margin of the cell 42, and thussignificantly reduces the likelihood of read instability. Likewise, asimilar analysis can be made when the cell 41 is read shortly afterbeing written with a logic 1.

FIG. 6 is a cross-sectional view of the access transistor 38 and theload device 32 of FIG. 4 according to one embodiment of the invention,it being understood that the transistor 40 and the load 34 of FIG. 4 canhave the same structure. The transistor 38 includes P+ source/drainregions 44 and 46, which are respectively coupled to the digit line 16and to the node A. The regions 44 and 46 are disposed in an N- well 48,which is disposed in a P substrate 50. An N+ leaky region 52 is disposedin the well 48 and is contiguous with the source/drain region 46. An N+contact region 54 allows the well 48 to be biased to a positive voltagesuch as Vcc. Likewise, a P+ contact region 56 allows the substrate 50 tobe biased to a negative voltage such as Vbb. Without the leaky region52, the junction of the well 48 and the region 46 would form areverse-biased diode having a reverse leakage current too low for thisdiode to be used as the load 32. But because the leaky region 52 is moreheavily doped than the well 48, it increases the reverse leakage currentof a reversed-biased diode 58 formed by the junction of the regions 46and 52 such that the diode 58 can be used as the load 32. Such a load 32is much less complex and requires fewer layers than a conventional load,and thus can significantly reduce the overall cost of the 4-T cell 36 ofFIG. 4. Furthermore, in an embodiment where the region 52 is formedbeneath the region 46, the load 32 occupies virtually no layout spacebeyond that already occupied by the access transistor 38. Additionally,the structure of the load 32 can be modified according to conventionalprinciples so as to be useable with the cell 42 of FIG. 5, and thesemiconductor regions 44, 46, 48, 50, 52, 54, and 56 can be formed usingconventional processing techniques.

FIG. 7 is a cross-sectional view of the access transistor 38 and theload 32 of FIG. 4 according to a second embodiment of the invention, itbeing understood that the transistor 40 and the load 34 of FIG. 4 canhave the same structure. Furthermore, like reference numerals are usedto indicate regions that are common to FIGS. 6 and 7. A major differencebetween this embodiment and that shown in FIG. 5 is that thereversed-biased diode 58 is replaced by a Schottky diode 60. The diode60 is formed by the junction of a Schottky-barrier layer 62 and the N-well region 48. The layer 62 is conventionally formed from aconventional barrier material such as titanium silicide. In oneembodiment, an N region 63 is formed beneath the Schottky-barrier layer62 to increase the reverse leakage current of the Schottky diode 60, andthus increase the stability of the cell 36 of FIG. 4. Although shown asbeing laterally spaced from the source/drain region 46, the region 63may be contiguous therewith. In another embodiment, the layer 62 extendsover the source/drain region 46 to form a low-resistance contact theretoand to the node A. Such a load 32 occupies virtually no layout spacebeyond that already occupied by the access transistor 38, and thus cansignificantly reduce the overall size of the 4-T cell 36 of FIG. 4.Additionally, the structure of the load 32 can be modified according toconventional principles so as to be useable with the cell 42 of FIG. 5.

FIG. 8 is a circuit diagram of a cell 64 according to a third embodimentof the invention, where like reference numerals are used to indicateelements that are common to FIGS. 1-5. The cell 64 is similar to thecell 42 of FIG. 4 except that it does not include the loads 32 and 34.Instead, the thresholds of the transistors 38 and 40 are such that whenWP is logic 1 , they conduct respective subthreshold currents from thedigit lines 16 and 18. These subthreshold currents are sufficient tocompensate for any leakage or offset currents at the nodes A and B,respectively, and thus stabilize the cell 64 while it is in standbymode, i.e., not being accessed. Although the transistors 38 and 40 maynot conduct a subthreshold current while the cell 64 or any other cellscoupled to the digit lines 16 and 18 are being accessed, the parasiticcapacitances at the nodes A and B are large enough to maintain thevoltages at these nodes during such access periods so that the cell 64does not become unstable. In one embodiment of the invention, the digitlines 16 and 18 are pulled up to Vcc with conventional PMOS pulluptransistors 66 and 68.

The subthreshold currents can be adjusted as needed by conventionallyimplanting the channel regions of the transistors 38 and 40 with adopant to adjust the thresholds thereof. In one embodiment, thethresholds of the transistors 38 and 40 are adjusted by implanting thechannel regions thereof with a P-type dopant. Because transistorsubthreshold currents are well known in the art, they are not furtherdiscussed here.

FIG. 9 is a block diagram of a memory circuit 70, which can include thecells 36, 42, and 64 of FIGS. 4, 5, and 8, respectively, and which caninclude one or both of the diode loads 58 and 60 of FIGS. 6 and 7,respectively. In one embodiment, the memory circuit 70 is a synchronousstatic random-access memory (SRAM).

The memory circuit 70 includes an address register 72, which receives anaddress from an ADDRESS bus. A control logic circuit 74 receives a clock(CLK) signal, and receives enable and write signals on a COMMAND bus,and communicates with the other circuits of the memory circuit 70. Aburst counter 75 causes the memory circuit 70 to operate in a burstaddress mode in response to a MODE signal.

During a write cycle, write driver circuitry 76 writes data to a memoryarray 78. The array 78 is the component of the memory circuit 70 thatcan include the cells 36, 42, and 64 of FIGS. 4, 5, and 8, respectively.If the cells 36 are included, then they themselves may each include arespective pair of the diode loads 58 or 60 of FIGS. 6 and 7,respectively. The array 78 also includes an address decoder 80 fordecoding the address from the address register 72. Alternately, theaddress decoder 80 may be separate from the array 78.

During a read cycle, sense amplifiers 82 amplify and provide the dataread from the array 78 to a data input/output (I/O) circuit 84. The I/Ocircuit 84 includes output circuits 86, which provide data from thesense amplifiers 82 to the DATA bus during a read cycle. The I/O circuit84 also includes input circuits 88, which provide data from the DATA busto the write drivers 76 during a write cycle. The input and outputcircuits 88 and 86 respectively, may include conventional registers andbuffers. Furthermore, the combination of the write driver circuitry 76and the sense amplifiers 82 can be referred to as read/write circuitry.

FIG. 10 is a block diagram of an electronic system 98, such as acomputer system, that incorporates the memory circuit 70 of FIG. 8. Thesystem 98 includes computer circuitry 100 for performing computerfunctions, such as executing software to perform desired calculationsand tasks. The circuitry 100 typically includes a processor 102 and thememory circuit 70, which is coupled to the processor 102. One or moreinput devices 104, such as a keyboard or a mouse, are coupled to thecomputer circuitry 100 and allow an operator (not shown in FIG. 9) tomanually input data thereto. One or more output devices 106 are coupledto the computer circuitry 100 to provide to the operator data generatedby the computer circuitry 100. Examples of such output devices 106include a printer and a video display unit. One or more data-storagedevices 108 are coupled to the computer circuitry 100 to store data onor retrieve data from external storage media (not shown). Examples ofthe storage devices 108 and the corresponding storage media includedrives that accept hard and floppy disks, tape cassettes, and compactdisk read-only memories (CD-ROMs). Typically, the computer circuitry 100includes address data and command buses and a clock line that arerespectively coupled to the ADDRESS, DATA, and COMMAND buses, and theCLK line of the memory circuit 70.

From the foregoing it will be appreciated that, although specificembodiments of the invention have been described herein for purposes ofillustration, various modifications may be made without deviating fromthe spirit and scope of the invention. Accordingly, the invention is notlimited except as by the appended claims.

We claim:
 1. A memory cell, comprising:first and second accessterminals; first and second data nodes; first and second supplyterminals; a read-write enable terminal; a first semiconductor regionhaving a first doping concentration of a first conductivity and coupledto the first supply terminal; a second semiconductor region having asecond doping concentration of the first conductivity and coupled to thefirst supply terminal; a first cell transistor coupled to the secondsupply terminal and to the first data node and having a control terminalcoupled to the second data node; a second cell transistor coupled to thesecond supply terminal and to the second data node and having a controlterminal coupled to the first data node; a first access transistorhaving a gate and having first and second source/drain regions of asecond conductivity that are disposed in the first semiconductor region,the gate coupled to the enable terminal, the first source/drain regioncoupled to the first access terminal, and the second source/drain regioncoupled to the first data node; a second access transistor having a gateand having first and second source/drain regions of the secondconductivity that are disposed in the second semiconductor region, thegate coupled to the enable terminal, the first source/drain regioncoupled to the second access terminal, and the second source/drainregion coupled to the second data node; a third semiconductor regiondisposed in the first semiconductor region, contiguous with the secondsource/drain region of the first access transistor, and having a thirddoping concentration of the first conductivity, the third concentrationbeing significantly greater than the first concentration; and a fourthsemiconductor region disposed in the second semiconductor region,contiguous with the second source/drain region of the second accesstransistor, and having a fourth doping concentration of the firstconductivity, the fourth concentration being significantly greater thanthe second concentration.
 2. The memory cell of claim 1 wherein:thefirst and second semiconductor regions comprise a same region; the firstand second doping concentrations are approximately the same; and thethird and fourth doping concentrations are approximately the same. 3.The memory cell of claim 1 wherein:the first and second cell transistorscomprises respective NMOS transistors; the first conductivity is n-type;and the second conductivity is p-type.
 4. The memory cell of claim 1,further comprising:a first contact region disposed in the firstsemiconductor region, coupled to the first supply terminal, and having afifth doping concentration of the first conductivity, the fifthconcentration significantly greater than the first concentration; and asecond contact region disposed in the second semiconductor region,coupled to the first supply terminal, and having a sixth dopingconcentration of the first conductivity, the sixth concentrationsignificantly greater than the second concentration.
 5. The memory cellof claim 1, further comprising:a fifth semiconductor region having thesecond conductivity; and wherein the first and second semiconductorregions comprise wells that are disposed in the fifth semiconductorregion.
 6. A memory cell, comprising:first and second access terminals;first and second data nodes; first and second supply terminals; aread-write enable terminal; a substrate having a first conductivity; awell region disposed in the substrate, having a first dopingconcentration of a second conductivity, and coupled to the first supplyterminal; a first cell transistor coupled to the second supply terminaland to the first data node and having a control terminal coupled to thesecond data node; a second cell transistor coupled to the second supplyterminal and to the second data node and having a control terminalcoupled to the first data node; a first access transistor having a gateand having first and second source/drain regions of the firstconductivity that are disposed in the well region, the gate coupled tothe enable terminal, the first source/drain region coupled to the firstaccess terminal, and the second source/drain region coupled to the firstdata node; a second access transistor having a gate and having first andsecond source/drain regions of the first conductivity that are disposedin the well region, the gate coupled to the enable terminal, the firstsource/drain region coupled to the second access terminal, and thesecond source/drain region coupled to the second data node; a firstsemiconductor region disposed in the well region, contiguous with thesecond source/drain region of the first access transistor, and having asecond doping concentration of the second conductivity, the secondconcentration being significantly greater than the first concentration;and a second semiconductor region disposed in the well region,contiguous with the second source/drain region of the second accesstransistor, and having approximately the second doping concentration ofthe second conductivity.
 7. The memory cell of claim 6 wherein:the firstand second cell transistors comprises respective NMOS transistors; thefirst conductivity is p-type; and the second conductivity is n-type. 8.The memory cell of claim 6, further comprising a contact region disposedin the well region, coupled to the first supply terminal, and having athird doping concentration of the second conductivity, the thirdconcentration being significantly greater than the first concentration.9. A memory cell, comprising:first and second access terminals; firstand second data nodes; first and second supply terminals; a read-writeenable terminal; a first semiconductor region having a first dopingconcentration of a first conductivity and coupled to the first supplyterminal; a second semiconductor region having a second dopingconcentration of the first conductivity and coupled to the first supplyterminal; a first cell transistor coupled to the second supply terminaland to the first data node and having a control terminal coupled to thesecond data node; a second cell transistor coupled to the second supplyterminal and to the second data node and having a control terminalcoupled to the first data node; a first access transistor having a gateand having first and second source/drain regions of a secondconductivity that are disposed in the first semiconductor region, thegate coupled to the enable terminal and the first source/drain regioncoupled to the first access terminal; a second access transistor havinga gate and having first and second source/drain regions of the secondconductivity that are disposed in the second semiconductor region, thegate coupled to the enable terminal and the first source/drain regioncoupled to the second access terminal; a first Schottky-barrier layercoupled to the first data node and disposed in contact with the firstsemiconductor region and the second source/drain region of the firstaccess transistor; and a second Schottky-barrier layer coupled to thesecond data node and disposed in contact with the second semiconductorregion and the second source/drain region of the second accesstransistor.
 10. The memory cell of claim 9 wherein:the first and secondsemiconductor regions comprise a same region; and the first and seconddoping concentrations are approximately the same.
 11. The memory cell ofclaim 9 wherein:the first and second cell transistors comprisesrespective NMOS transistors; the first conductivity is n-type; and thesecond conductivity is p-type.
 12. The memory cell of claim 9, furthercomprising:a first contact region disposed in the first semiconductorregion, coupled to the first supply terminal, and having a third dopingconcentration of the first conductivity, the third concentrationsignificantly greater than the first concentration; and a second contactregion disposed in the second semiconductor region, coupled to the firstsupply terminal, and having a fourth doping concentration of the firstconductivity, the fourth concentration significantly greater than thesecond concentration.
 13. The memory cell of claim 9, furthercomprising:a fifth semiconductor region having the second conductivity;and where in the first and second semiconductor regions comprise wellsthat are disposed in a fifth semiconductor region.
 14. The memory cellof claim 9 wherein the first and second Schottky-barrier layers comprisetitanium silicide.
 15. The memory cell of claim 9, further comprising:athird semiconductor region disposed in the first semiconductor regionand in contact with the first Schottky-barrier layer, the thirdsemiconductor region having a third doping concentration of the firstconductivity, the third concentration greater than the firstconcentration; and a fourth semiconductor region disposed in the secondsemiconductor region and in contact with the second Schottky-barrierlayer, the fourth semiconductor region having a fourth dopingconcentration of the first conductivity, the fourth concentrationgreater than the second concentration.
 16. A memory cell,comprising:first and second access terminals; first and second datanodes; first and second supply terminals; a read-write enable terminal;a substrate having a first conductivity; a well region disposed in thesubstrate, having a first doping concentration of a second conductivity,and coupled to the first supply terminal; a first cell transistorcoupled to the second supply terminal and to the first data node andhaving a control terminal coupled to the second data node; a second celltransistor coupled to the second supply terminal and to the second datanode and having a control terminal coupled to the first data node; afirst access transistor having a gate and having first and secondsource/drain regions of the first conductivity that are disposed in thewell region, the gate coupled to the enable terminal and the firstsource/drain region coupled to the first access terminal; a secondaccess transistor having a gate and having first and second source/drainregions of the first conductivity that are disposed in the well region,the gate coupled to the enable terminal and the first source/drainregion coupled to the second access terminal; a first Schottky-barrierlayer coupled to the first data node and disposed in contact with thewell region and the second source/drain region of the first accesstransistor; and a second Schottky-barrier layer coupled to the seconddata node and disposed in contact with the well region and the secondsource/drain region of the second access transistor.
 17. The memory cellof claim 16 wherein:the first and second cell transistors comprisesrespective NMOS transistors; the first conductivity is p-type; and thesecond conductivity is n-type.
 18. The memory cell of claim 16, furthercomprising a contact region disposed in the well region, coupled to thefirst supply terminal, and having a approximately the second dopingconcentration of the second conductivity.
 19. A memory circuit,comprising:first and second supply terminals; address, data, and commandbusses; an array of memory cells arranged in rows and columns, each ofthe memory cells respectively comprising,first and second accessterminals, first and second data nodes, a read-write enable terminal, afirst semiconductor region having a first doping concentration of afirst conductivity and coupled to the first supply terminal, a secondsemiconductor region having a second doping concentration of the firstconductivity and coupled to the first supply terminal, a first celltransistor coupled to the second supply terminal and to the first datanode and having a control terminal coupled to the second data node, asecond cell transistor coupled to the second supply terminal and to thesecond data node and having a control terminal coupled to the first datanode, a first access transistor having a gate and having first andsecond source/drain regions of a second conductivity that are disposedin the first semiconductor region, the gate coupled to the enableterminal, the first source/drain region coupled to the first accessterminal, and the second source/drain region coupled to the first datanode, a second access transistor having a gate and having first andsecond source/drain regions of the second conductivity that are disposedin the second semiconductor region, the gate coupled to the enableterminal, the first source/drain region coupled to the second accessterminal, and the second source/drain region coupled to the second datanode, a third semiconductor region disposed in the first semiconductorregion, contiguous with the second source/drain region of the firstaccess transistor, and having a third doping concentration of the firstconductivity, the third concentration being significantly greater thanthe first concentration, and a fourth semiconductor region disposed inthe second semiconductor region, contiguous with the second source/drainregion of the second access transistor, and having a fourth dopingconcentration of the first conductivity, the fourth concentration beingsignificantly greater than the second concentration; an address decodercoupled to the address bus and to the array; a read/write circuitcoupled to the address decoder and to the array; a data input/outputcircuit coupled to the data bus and to the read/write circuit; and acontrol circuit coupled to the command bus, to the address decoder, tothe, read/write circuit, and to the data input/output circuit.
 20. Thememory circuit of claim 19 wherein:the first and second cell transistorscomprises respective NMOS transistors; the first conductivity is n-type;and the second conductivity is p-type.